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| InGaAs-PIN/Preamp Receiver FEATURES * 2.7Gb/s PIN Receiver module in an industry standard mini-DIL package is available in gull-wing or through-hole configuration * High Sensitivity: -25dBm (typ.) * Differential Electrical Output * Pre-amplifier Power Supply Voltage: +3.3V * Wide operating temperature range: -40 to +85C FRM3Z232BS/BS-A APPLICATIONS This PIN detector preamp is intended to function as an optical receiver in intermediate reach SONET, SDH, and DWDM systems operating up to 2.7Gb/s. The device operates in both the 1,310 and 1,550nm wavelength windows. The detector preamplifier has a differential electrical output. DESCRIPTION This PIN preamplifier uses an InGaAs PIN chip with a GaAs transimpedance preamplifier. The BS package is designed for surface mount PC board assembly, and the BS-A is designed for through-hole mount assembly. The package is connected with a single-mode fiber by Nd: YAG welding techniques. This device is in compliance with ITU-T recommendations and meet the Telcordia requirements. ABSOLUTE MAXIMUM RATINGS (Tc=25C, unless otherwise specified) Parameter Storage Temperature Operating Temperature Supply Voltage PIN-PD Reverse Voltage PIN-PD Reverse Current Symbol Tstg Top VDD VR IR (Peak) Ratings -40 to +85 -40 to +85 0 to 4.5 0 to 20 3.0 Unit C C V V mA Edition 1.2 March 2003 1 FRM3Z232BS/BS-A InGaAs-PIN/Preamp Receiver OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25C, =1,550nm, VR=+3.3V or +5.0V, VDD=+3.3V unless otherwise specified) Parameter PIN-PD Responsivity Symbol R13 R15 R16 Zt BW fcl dpk GD S22 in Test Conditions = 1,310nm, M=1 = 1,550nm, M=1 = 1,610nm, M=1 Pin=-20dBm, f=100MHz, Single-ended Pin=-20dBm, -3dB from 1MHz Pin=-20dBm, from 1 MHz Pin=-20dBm, from 500MHz to 1.75GHz 1.75GHz max. 2.5GHz max. Average within 2.2GHz Ta=25C, Rext=14dB Sensitivity Pr (Note 3) Ta=40C ~ 85C, Rext=14dB Ta=25C, Rext=10dB Min. 0.75 0.80 1800 2.2 10 5 0 Limits Typ. 0.80 0.85 0.70 2200 2.4 50 100 9.5 -25 -24 -24 Max. 2600 75 2 11.0 -24 -22 dBm -3 450 30 3.15 550 45 3.30 800 70 3.45 mV dB mA V dBm Unit A/W GHz kHz dB psec dB pA/ Hz AC Transimpedance Bandwidth Lower Cut-off Frequency Peaking Group Delay Deviation Output Return Loss Equivalent Input Noise Current Density Maximum Overload Pmax 2.488Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10 (Note 2) Maximum Output Voltage Swing Optical Return Loss Power Supply Current Power Supply Voltage Vclip ORL IDD VDD Saturated Output Voltage Note 1: All the parameters are measured with 50 AC-coupled. Note 2: Defined by a 10% distortion of the wave form. Note 3: Test condition is 2.488Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10 with fc=1866MHz Bessel filter. 2 InGaAs-PIN/Preamp Receiver Notes FRM3Z232BS/BS-A 3 FRM3Z232BS/BS-A "BS" PACKAGE (GULL-WING) Detail of Lead 0.90.1 4.10.2 0.30.05 InGaAs-PIN/Preamp Receiver "BS-A" PACKAGE (THROUGH-HOLE) UNIT: mm UNIT: mm 0.90.1 (#1) 4.10.2 (#8) 0.500.15 (0.5) 1.20.07 1000 min. (R 0. 7) 0~10 (#4) (#5) 1000 min. Top View 24.12.0 24.12.0 Pin Description 1. VR 2. GROUND 3. OUT + 4. GROUND 5. NC 6. OUT 7. GROUND 8. VDD 0.40.05 (#1) (#8) 7.620.2 (#4) (#5) 11.370.15 (P2.54x3) 0.40.05 11.370.15 Pin Description 1. 2. 3. 4. 5. 6. 7. 8. VR GROUND OUT + GROUND NC OUT GROUND VDD 7.370.15 5.2MAX. (0.5) (2.0) 7.370.15 4.5 MON. 5.2MAX. (0.5) (2.0) 9.770.15 See Lead Detail 7.870.15 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0302M200 4 (P2.54x3) Top View 7.620.2 |
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